APTMC120AM20CT1AG APTMC120AM20CT1AG C rev 1 june, 2013 www.microsemi.com 1 C 6 pins 1/2 ; 3/4 ; 5/6 must be shorted together all ratings @ t j = 25c unless otherwise specified 1. sic mosfet characteristics (per mosfet) these devices are sens itive to electrostatic discharge. proper handling procedures should be follow ed. see application note apt0502 on www.microsemi.com symbol parameter max ratings unit v dss drain - source breakdown voltage 1200 v i d continuous drain current t c = 25c 143 a t c = 80c 108 i dm pulsed drain current 280 v gs gate - source voltage -10/+25 v r dson drain - source on resistance 17 m p d maximum power dissipation t c = 25c 600 w application ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? sic power mosfet - low r ds(on) - high temperature performance ? sic schottky diode - zero reverse recovery - zero forward recovery - temperature independent switching behavior - positive temperature coefficient on vf ? very low stray inductance ? internal thermistor for temperature monitoring ? high level of integration ? aln substrate for improved thermal performance benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? rohs compliant phase leg s ic mosfet power modul e v dss = 1200v r dson = 17m max @ tj = 25c i d = 143a @ tc = 25c downloaded from: http:///
APTMC120AM20CT1AG APTMC120AM20CT1AG C rev 1 june, 2013 www.microsemi.com 2 C 6 electrical characteristics symbol characteristic test conditions min typ max unit i dss zero gate voltage drain current v gs = 0v , v ds = 1200v 20 200 a r ds(on) drain C source on resistance v gs = 20v i d = 100a t j = 25c 12.5 17 m t j = 150c 22 32 v gs ( th ) gate threshold voltage v gs = v ds , i d = 2ma 1.9 2.3 v i gss gate C source leakage current v gs = 20 v, v ds = 0v 1 a dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance v gs = 0v v ds = 1000v f = 1mhz 5960 pf c oss output capacitance 440 c rss reverse transfer capacitance 46 q g total gate charge v gs = -2/+20v v bus = 800v i d =100a 360 nc q gs gate C source charge 64 q gd gate C drain charge 126 t d(on) turn-on delay time v gs = -2/+20v v bus = 800v i d = 100a r l = 8 ? ; r g = 10 ? 21 ns t r rise time 19 t d(off) turn-off delay time 50 t f fall time 30 e on turn on energy inductive switching v gs = -5/+20v v bus = 600v i d = 100a r g = 10 t j = 150c 2.2 mj e off turn off energy t j = 150c 1.2 r thjc junction to case thermal resistance 0.21 c/w 2. sic diode characterist ics (per sic diode) symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v i rm maximum reverse leakage current v r =1200v t j = 25c 70 400 a t j = 175c 130 800 i f dc forward current tc = 125c 40 a v f diode forward voltage i f = 40a t j = 25c 1.5 1.8 v t j = 175c 2.2 3 q c total capacitive charge i f = 40a, v r = 1200v di/dt = 1000a/s 260 nc c total capacitance f = 1mhz, v r = 200v 186 pf f = 1mhz, v r = 400v 134 r thjc junction to case thermal resistance 0.7 c/w downloaded from: http:///
APTMC120AM20CT1AG APTMC120AM20CT1AG C rev 1 june, 2013 www.microsemi.com 3 C 6 3. thermal and package characteristics package characteristics symbol characteristic min typ max unit v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range sic mosfet -40 150 c sic diode -40 175 t jop recommended junction temperature under switching conditions -40 t j max -25 t stg storage temperature range -40 125 t c operating case temperature -40 125 torque mounting torque to heatsink m4 2 3 n.m wt package weight 80 g temperature sensor ntc (see application note apt0406 on www.microsemi.com). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ? ?? ? ? ?? ? ? ?? ? ? ?? ? ? = t t b r r t 1 1 exp 25 85/25 25 sp1 package outline (dimensions in mm) see application note 1904 - mounting instructions for sp1 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t downloaded from: http:///
APTMC120AM20CT1AG APTMC120AM20CT1AG C rev 1 june, 2013 www.microsemi.com 4 C 6 4. typical performance curves sic mosfet v gs =15v 20 0 40 80 120 160 200 012345 i d , drain current (a) v ds , drain to source voltage (v) output characteristics t j =2 5 c 0.75 1 1.25 1.5 1.75 25 50 75 100 125 150 t j , junction temperature (c) normalized r ds(on) vs. temperature r dson , drain to source on resistance v gs =20v d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal impedance (c/w) rectangular pulse duration (seconds) maximum effective transient thermal impedance, junction to case vs pulse duration eon eoff 0 1 2 3 4 5 0 40 80 120 160 200 losses (mj) current (a) switching energy vs current v gs =-5/20v r g =10 ? v bus = 600v t j = 150 c v gs =15v 20 0 40 80 120 160 200 01234567 i d , drain current (a) v ds , drain to source voltage (v) output characteristics t j =1 50 c eon eoff 0 1 2 3 4 10 15 20 25 30 losses (mj) gate resistance (ohm) switching energy vs rg v gs =-5/20v i d = 100a v bus = 600v t j = 150 c t j =25c t j =150c 0 20 40 60 80 100 120 024681 0 i d , drain current (a) v gs , gate to source voltage (v) transfert characteristics downloaded from: http:///
APTMC120AM20CT1AG APTMC120AM20CT1AG C rev 1 june, 2013 www.microsemi.com 5 C 6 ciss crss coss 10 100 1000 10000 0 200 400 600 800 1000 c, capacitance (pf) v ds , drain to source voltage (v) capacitance vs drain to source voltage 0 4 8 12 16 20 0 60 120 180 240 300 360 v gs , gate to source voltage (v) gate charge (nc) gate charge vs gate to source voltage v gs = 20v i d = 100a v ds = 800v hard switching zcs zvs 0 100 200 300 400 500 600 700 20 40 60 80 100 120 140 160 frequency (khz) i d , drain current (a) operating frequency vs drain current v bus =600v d=50% r g =10 ? t j =1 50 c t c =75 c sic diode d = 0.9 0.7 0.5 0.3 0.1 0.05 sing le pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal impedance (c/w) rectangular pulse duration (seconds) maximum effective transient thermal impedance, junction to case vs pulse d uration t j =25c t j =75c t j =125c t j =175c 0 10 20 30 40 50 60 70 80 00.511.522.533.5 i f forward current (a) v f forward voltage (v) forward characteristics t j =25c t j =75c t j =125c t j =175c 0 50 100 150 200 600 800 1000 1200 1400 1600 i r reverse current (a) v r reverse voltage (v) reverse characteristics 0 300 600 900 1200 1 10 100 1000 c, capacitance (pf) v r reverse voltage capacitance vs.reverse voltage downloaded from: http:///
APTMC120AM20CT1AG APTMC120AM20CT1AG C rev 1 june, 2013 www.microsemi.com 6 C 6 disclaimer the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the ter ms of such agreement will also apply. this document and the information contained herein may not be modified, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication , inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an officer of microsemi. microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with li fe- support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customer s final application. user or customer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp life support application seller's products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the seller's product could create a situation where personal injury, death or property damage or loss may occur (collectively "life support applications"). buyer agrees not to use products in any life support applications and to the extent it does it shall conduct extensive testing of the product in such applications and further agrees to indemnify and hold seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, dam ages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damag e or otherwise associated with the use of the goods in life support applications, even if such claim includes allegations that seller was negligent regarding the design or manufacture of the goods. buyer must notify seller in writing before using sellers products in life support applications. seller will study with buyer alternative solutions to meet buyer application specification based on sellers sales conditions applicable for the new proposed specific part. downloaded from: http:///
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